| PART |
Description |
Maker |
| EDE5116AFSE-5C-E EDE5116AFSE-6E-E EDE5116AFSE-4A-E |
512M bits DDR2 SDRAM (32M words x 16 bits)
|
Elpida Memory, Inc.
|
| EDE5104AHSE-6E-E EDE5104AHSE |
512M bits DDR2 SDRAM
|
Elpida Memory
|
| EDE5132AABG-6E-F EDE5132AABG EDE5132AABG-8E-F |
512M bits DDR2 SDRAM
|
Elpida Memory
|
| EDE5108AJBG |
512M bits DDR2 SDRAM
|
Elpida Memory
|
| EDE2108ABSE EDE2108ABSE-5C-E EDE2108ABSE-6E-E EDE2 |
2G bits DDR2 SDRAM 512M X 4 DDR DRAM, 0.45 ns, PBGA68
2G bits DDR2 SDRAM 256M X 8 DDR DRAM, 0.4 ns, PBGA68
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| EBE51UD8ABFV EBE51UD8ABFV-AE-E EBE51UD8ABFV-BE-E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
|
Elpida Memory
|
| EDD5108AFTA-6B-E EDD5116AFTA-6B-E EDD5108AFTA-7B-E |
512M bits DDR SDRAM
|
Elpida Memory, Inc.
|
| EDD5116ADTA-E EDD5104ADTA-6B-E EDD5104ADTA-6BL-E E |
512M bits DDR SDRAM
|
ELPIDA[Elpida Memory]
|
| EDD5108AFBG-5C-E EDD5108AFBG-6B-E EDD5108AFBG-5B-E |
512M bits DDR SDRAM
|
Elpida Memory
|
| K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| EBE51UD8AEFA-5C-E EBE51UD8AEFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) 512MB的无缓冲DDR2 SDRAM DIMM内存400字64位，1个等级）
|
Elpida Memory, Inc.
|
